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imec High-NA Pattern Samples

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  • Random vias with a 30nm center-to-center distance with excellent pattern fidelity and critical dimension uniformity
    Random vias with a 30nm center-to-center distance with excellent pattern fidelity and critical dimension uniformity View Original Size
  • 9-5nm random logic structure (19nm pitch) after pattern transfer
    9-5nm random logic structure (19nm pitch) after pattern transfer View Original Size
  • Imec demonstrates an integration of the storage node landing pad with the bit line periphery for DRAM
    Imec demonstrates an integration of the storage node landing pad with the bit line periphery for DRAM View Original Size
  • 2D features at a P22nm pitch exhibited outstanding performance
    2D features at a P22nm pitch exhibited outstanding performance View Original Size
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